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Experimental and Theoretical NANOTECHNOLOGY

About the Journal :

Experimental and Theoretical NANOTECHNOLOGY (ETN) abbreviated as Exp. Theo. NANOTECHNOLOGY is a multidisciplinary peer-reviewed and open access journal. It includes specialized research papers, short communications, reviews and selected conference papers in special issues on the characterization, synthesis, processing, structure and properties of different principles and applications of nanotechnology with focus on advantageous achievements and applications for the specialists in engineering, chemistry, physics, materials science and medicine. ETN covers and publishes all aspects of fundamental and applied researches of experimental and theoretical nanoscale technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology within the scope of the journal. ETN aims to acquire the recent and outstanding researches for the benefit of the human being.



GAAS1-XNX CANDIDATE MATERIAL FOR A HIGH EFFICIENCY BASED HOMOJUNCTION SOLAR CELL

Abstract:

The GaAsN alloy has a great potential in the manufacture of the photovoltaic devices. A simple optimized GaAsN junction can reach conversion efficiency from > 20%, comparable with that reached by the best cells of die CISGS. Because the band gap of GaAsN can be modified from 1.4 eV to 3.4 eV by increasing the nitrogen content with multi-junction cells, it is theoretically possible to achieve the record performance 70% with this only material system, whereas the theoretical record in technology GaAs multi-junctions is less than 50%. The work presented in this paper concerns the study of photovoltaic cells based on GaAsN nitrided materials. The main objective is to optimize the front and base with their thickness and doping, on the electrical characteristic of the photovoltaic cell and subsequently its output parameters under solar illumination of AM1.5G.  54.1 % efficiency is predicted for this new GaAs1-xNx based on a simple single solar cell. This structure can also provide a fundamental solar cell unit for developing very high efficiency IBSC solar cell.

Keywords: GaAsN; solar cell; homojunction; simulation; efficiency.